HMC345LP3E

GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC* - 8 GHz

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Price:: US $7.50~10.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100 :	10.00 / Piece
100 ~ 1000 :	8.00 / Piece
1000 ~ 10000 :	7.50 / Piece

PartNumber:: HMC345LP3E

Brand:: Hittite Microwave Corporation - Hittite | Pack: TQFN | D/C: 09+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-09-25

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Part Number:HMC345LP3E
US $7.50 - 10.00
Quantity:

piece

Product Summary

The HMC345LP3 & HMC345LP3E are broadband
non-rel ective GaAs MESFET SP4T switches in low
cost leadless surface mount packages. Covering DC
to 8 GHz, this switch offers high isolation and low
insertion loss. This switch also includes an on board
binary decoder circuit which reduces the required
logic control lines to two. The switch operates using a
positive control voltage of 0/+5V, and requires a i xed
bias of +5V.

Parametrics

Bias Voltage Range (Vdd) +7.0 Vdc
Control Voltage Range
(A & B)
-0.5V to Vdd +1.0 Vdc
Channel Temperature 150 °C
Thermal Resistance
(Insertion Loss Path)
143 °C/W
Thermal Resistance
(Terminated Path)
1030 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Maximum Input Power +24 dBm
ESD Sensitivity (HBM) Class 1A

Features

Broadband Performance: DC - 8 GHz
High Isolation: 35 dB@ 6 GHz
Low Insertion Loss: 2.2 dB@ 6 GHz
Integrated Positive Supply 2:4 TTL Decoder
3 x 3 mm SMT Package

Diagrams

Insertion Loss
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
2.0
2.2
2.4
2.4
2.6
2.9
dB
dB
dB
Isolation
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
37
32
31
27
42
37
35
32
dB
dB
dB
dB
Return Loss “On State”
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
10
8
7
6
13
11
10
9
dB
dB
dB
dB
Return Loss (RF1 - RF4) “Off State” 2.0 - 8.0 GHz 6 10 dB
Input Power for 1 dB Compression 2.0 - 8.0 GHz 17 21 dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone, 1MHz Tone Separation)
2.0 - 8.0 GHz 37 45 dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
50
120
ns
ns